报告题目：Electrical spin injection and detection in molybdenum disulfide multilayer channel

报 告 人：Yuan Lu，Institute Jean Lamour，University of Lorraine

报告时间：2016年12月29日10:00

报告地点：Lecture Hall B315, New Science Building

报告摘要：Molybdenum disulfide (MoS₂) has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating electron spin transport through a semiconducting MoS₂channel is challenging. Here we evidence the electrical spin injection and detection in a multilayer MoS₂semiconducting channel with a two-terminal spin-valve measurement. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450 nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that keeping a good balance between the interface resistance and channel resistance plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS₂channel with in-plan spin injection. The underestimated long spin diffusion length (~235nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.