报告题目：II-VI and III-V semiconductor integration and its applications

报 告 人：Yong-Hang Zhang，Directors of ASU NanoFab and Center for Photonics Innovation；School of Electrical, Computer and Energy Engineering, Arizona State University

报告时间：2016年9月22日16:00

报告地点：理科楼三楼报告厅（C302）

报告摘要：Semiconductor optoelectronic materials and devices have experienced very rapid development for more than half a century. However, there still remains a lack of closely lattice-matched materials and substrates suitable for the grand integration of various kinds of semiconductor optoelectronic and electronic devices on a single chip. I have recently proposed a new material platform: the II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to InAs, GaSb and InSb substrates. The binaries, alloys, and their quantum structures (quantum well and superlattice) of the platform have direct bandgaps covering a very broad energy spectrum from far IR (< 0 ev) to uv (~3.4 ev). this feature is not achievable by any other known lattice-matched semiconductors on any commercially available substrates. such a unique material platform enables new light emitting devices, multi-junction solar cells, multi-color photodetectors, high electron mobility transistors (hemts), resonant tunneling diodes, and facilitates monolithic integration of various materials without misfit dislocations to ensure the best quality for device applications. this talk will focus on the latest progress of the mbe growth of the materials and their applications in these devices. it will also touch the potential about the use of the materials platform to study fundamental science like topological insulators and related new quantum materials.