报告题目：Searching for transformative materials beyond graphene: The rise of indium selenide

报 告 人：Amalia Patanè，School of Physics and Astronomy，University of Nottingham

报告时间：2019-12-20 10:00

报告地点：物理系理科楼C302

报告摘要：The search for transformative materials beyond traditional covalent semiconductors, such as Si, has led to fast growing activities on new two-dimensional (2D) semiconductors and the exciting growing development of the metal chalcogenide indium selenide, InSe. This 2D crystal exhibits strong covalent atomic bonds in the layer plane and van der Waals (vdW) attraction between the layers, enabling the isolation of high-quality stable thin films down to the atomic monolayer thickness. The science and technology of 2D InSe represent a rapidly developing and vibrant field with breakthroughs emerging from both experiment and theory. This 2D semiconductor has a high photoresponsivity from the infrared (IR) to the ultra-violet (UV) spectral range; a low mass conduction band electrons and high electron mobility even in atomically thin films, larger than in Si-based field effect transistors (FETs); high mechanical strength; a strain-sensitive band structure; a density of states with 1D van Hove singularities, etc In this talk, I will present my recent research on 2D InSe and its heterostructures, and discuss emerging activities with prospects for digital ultra-thin electronics and nanophotonics.

https://www.scitecheuropa.eu/2d-systems/91875/