报告题目：Electrochemical modulation of functional oxides using three-terminal thin film transistor structure with water infiltrated gate dielectrics

报 告 人：Hiromichi Ohta， Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan

报告时间：2017-09-26 15:00

报告地点：物理系理科楼C302报告厅

报告摘要：Water is composed of two strong electrochemically active agents, H+ and OH- ions, but has not been used as an active electronic material in oxides. One of our research strategies is free manipulation of functional properties, i.e. optical, electrical, and magnetic, of oxide thin films by using the electrochemical activity of water. In order to handle water, we use a water-infiltrated mesoporous glass [1] -amorphous 12CaO·7Al2O3 (CAN)- as the gate insulator of thin film transistor structure with three-terminal electrodes geometry. Positive gate voltage, chemisorption (or physisorption) of H+ and/or proton intercalation results in electron accumulation in the active oxide, while negative gate voltage, chemisorption (or physisorption) of OH- and/or oxidation results in hole accumulation in the active oxide. By using this technique, we could modulate not only electrical conductivity but also optical [2, 4], magnetic [3], and thermoelectric properties [5] of active oxides. The electron activity of water as it infiltrates mesoporous glass may find many useful applications in electronics or in information storage.