报告题目：Full Band Engineering towards Topological State with Simultaneous Nonzero Charge and Spin Chern Numbers

报 告 人： Xiao Hu，International Center for Materials Nanoarchitectonics (WPI-MANA), NIMS, Japan

报告时间：3月12日（周二）16:30

报告地点：理科楼三楼报告厅

报告摘要：We formulate explicitly a scheme to achieve a novel topological state by using staggered electric potential, antiferromagnetic exchange field and spin-orbit coupling to control the spin, valley and sublattice degrees of freedom of electrons. With first principles calculation we demonstrate that the scheme can be realized by material modification in perovskite G-type antiferromagnetic insulators grown along [111] direction, where d electrons hop on a buckled honeycomb lattice. This novel state is ideal for spintronic applications, since it provides a quantized edge current with full spin polarization tunable by inverting electric field, robust to defects, both nonmagnetic and magnetic, and stable at high temperature.

This work is based on collaboration with Dr. Q. F. Liang and Mr. L. -H. Wu.