报告题目：Study on material and devices fabricated by MBE

报 告 人：朱海军， 副总经理(总工程师)， Intelligent Epitaxy Technology Inc，Dallas，美国

报告时间：1月11日16:00

报告地点：理科楼三楼报告厅

报告摘要：1. Coulomb charging effect in Ge quantum dots studied by admittance spectroscopy

2. Spin Injection from ferromagnetic metals into GaAs

3. MBE Growth of InP/GaAsSb and InAl(As,P)/GaAsSb DHBT Structures

4. Ultra Low Background InGaAs Epi-layer on InP for PIN Applications by Production MBE

5. Future work at Tsinghua